| PART |
Description |
Maker |
| IZF1167-7F25 IZF1167-3F25 IZF1167-12F25 IZF1167-10 |
2390 A, 700 V, SCR
2390 A, 300 V, SCR
2390 A, 1200 V, SCR
2390 A, 1000 V, SCR
2390 A, 900 V, SCR
1470 A, 800 V, SCR
1950 A, 1000 V, SCR
1950 A, 1100 V, SCR
1370 A, 1400 V, SCR
1470 A, 500 V, SCR
2835 A, 1100 V, SCR
1370 A, 1200 V, SCR
1470 A, 200 V, SCR
|
ITT, Corp.
|
| KGL4126HA |
11.3 GBPS Mach-zehnder Modulator Driver ic
|
Oki Semiconductor
|
| CM75DU-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| TA202412 TA202414 TA203012 TA203014 TA204012 TA204 |
Phase Control SCR (1200-1400 Amperes Avg 2400-4000 Volts) 第一阶段控制晶闸管（1200-1400安培平均2400-4000伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
| APT35GN120L2DQ2 APT35GN120L2DQ2G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: 264 MAX™ [L2]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 46; 94 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| APT15GN120BDQ1 APT15GN120BDQ1G |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: TO-247 [B]; BV(CES) (V): 1200; IC (A): 22; 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
| APT15GT120BR APT15GT120BRG APT15GT120SRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 15; 36 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts 150 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| STTH6012 STTH6012W |
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-247
Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
| APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
|
